| PART |
Description |
Maker |
| BFC52 |
4TH GENERATION MOSFET
|
Seme LAB
|
| BFC63 |
4TH GENERATION MOSFET
|
Seme LAB
|
| BFC43 |
4TH GENERATION MOSFET
|
TT electronics Semelab Limited
Seme LAB
|
| GT60N321 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications The 4th Generation
High Power Switching Applications The 4th Generation 高功率转换应用的第四
|
Toshiba, Corp.
|
| BFC11 |
4TH GENERATION MOSFET N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE ISOLATED POWER MOSFETS
|
TT electronics Semelab Limited
Seme LAB
|
| PS22053 |
1200V/10A low-loss 4th generation IGBT inverter bridge
|
Mitsubishi Electric Semiconductor
|
| USB2227-AHZS-XX USB2227-NU-05 USB222706 USB2228-AH |
4th Generation USB2.0 Flash Media Controller with Integrated Card Power FETs
|
SMSC[SMSC Corporation]
|
| USB2226 |
4th Generation USB 2.0 Flash Media Controller with Integrated Card Power FETs
|
SMSC Corporation
|
| GT60J321 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT The 4th Generation Soft Switching Applications
|
TOSHIBA[Toshiba Semiconductor]
|
| PS22056 PS2205612 |
Dual-In-Line Package Intelligent Power Module
1200V/25A low-loss 4th generation IGBT inverter bridge
|
Mitsubishi Electric Semiconductor
|
| PS21353-N |
DIP - IPM
600V/10A low-loss 4th generation (planar) IGBT inverter bridge for 3 phase DC-to-AC power conversion.
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
